Effect of NH3 on Film Properties of MOCVD Tungsten Nitride from Cl4„CH3CN...W„N iPr..

Thin films of tungsten nitride were deposited from Cl4(CH3CN!W~N Pr) by metallorganic chemical vapor deposition ~MOCVD! in the presence and absence of ammonia (NH3) coreactant. Films were analyzed by X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy ~XPS!. Films grown with NH3 had increased nitrogen levels and decreased carbon and oxygen levels relative to films grown without NH3 over the entire deposition temperature range ~450-700°C!. Deposition with NH3 at higher temperature ~>600°C! led to higher crystallinity. Binding energies from XPS measurements were consistent with the formation of WNx ~or WNxCy) and WO3 in the films, regardless of whether NH3 was present. The addition of NH3 at lower deposition temperature increased film resistivity significantly. © 2004 The Electrochemical Society. @DOI: 10.1149/1.1789412# All rights reserved.